| 摘要 |
PURPOSE: A method for manufacturing a metal wiring in a semiconductor device is provided to be capable of preventing defects due to photoresist residues and bridge between metal lines. CONSTITUTION: The first etch stop layer(22), the first insulating layer(23), the second etch stop layer(24), the second insulating layer(25) and the third etch stop layer are sequentially formed on a semiconductor substrate(21). The third etch stop layer is selectively etched using the first photoresist pattern for defining a contact region. After removing the first photoresist pattern, the exposed third etch stop layer, the second insulating layer(25) and the second etch stop layer(24) are selectively etched using the second photoresist pattern for defining a metal wiring region. After removing the second photoresist pattern, a trench and a contact hole are simultaneously formed. A metal wiring(29) is then formed by filling a metal film into the contact hole and the trench and polishing the metal film.
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