| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the generation of seams and voids when forming a plug. CONSTITUTION: An insulating layer(21) having an opening part is formed on a conductive layer(20). A multilayer barrier film(22) including a lower and upper barrier film(22a,22b) is formed on the entire surface of the resultant structure. A conductive layer is formed on the barrier film(22) to sufficiently fill the opening part. The conductive layer is etch-back so as to expose the lower barrier film(22a) by using fluorine gas as an etching gas. Then, etch residues are removed by using the same fluorine gas having small gas flow compared to the etch-back processing, thereby forming a plug(23).
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