| 摘要 |
PURPOSE: A cleaning solution is provided which is less harmful to environment and human body to secure stability of process, and a method for cleaning metal layer using the cleaning solution is provided to improve yield and price competitiveness of semiconductor device by improving wafer processing ratio and reducing manufacturing cost. CONSTITUTION: In a cleaning solution for cleaning metal layer, the cleaning solution comprises ammonium hydroxide, acetic acid, hydrogen fluoride, deionized water, benzotriazole and ethylene glycol to etch the metal layer, wherein a ratio of the ammonium hydroxide to the acetic acid is 1:1 to 1:1.5, a ratio of the hydrogen fluoride to the deionized water is 0.005:7.5 to 0.01:8, and wherein the pH of the cleaning solution is 5.0 to 8.0. The method for forming a metal layer comprises the steps of forming a metal layer on a substrate(10); forming a metal layer pattern(11) by performing a certain photolithography process using the metal layer; and cleaning the metal layer pattern using the cleaning solution, wherein the cleaning step is performed for 2 to 10 minutes, wherein the cleaning step is performed at the temperature range of 25 to 40 deg.C, and wherein the method further comprises the steps of rinsing the cleaned metal layer pattern(11) using deionized water after the cleaning step; and drying the rinsed metal layer pattern.
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