| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of restraining the increase of parasitic capacitance and preventing the decrease of operating speed by using an oxide layer spacer and a metal plug, respectively. CONSTITUTION: A plurality of gate patterns(23) are formed on a semiconductor substrate(21). An oxide layer spacer(25) is formed on both sidewalls of each gate pattern. Then, the first interlayer dielectric is deposited on the entire surface of the resultant structure. A contact hole is formed between the gate patterns by etching the first interlayer dielectric for exposing the predetermined surface of the semiconductor substrate. A plug made of a doped polysilicon layer(28) and a metal layer(29), is formed in the contact hole.
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