| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve uniformity of critical dimension of a trench photo process by making a bottom anti-reflective coating(BARC) filling through a BARC chemical mechanical polishing(CMP) process when a trench process is performed on a substrate in which a via hole is patterned. CONSTITUTION: The substrate(10) is prepared in which a plurality of via holes(20) are patterned. The BARC(30a) is formed on the substrate by such a thickness to fill the plurality of via holes. A part of the BARC is eliminated and planarized through a CMP process. The molecular weight of the BARC is from 1000 to 100000.
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