发明名称 Single event upset hardening technique for bipolar devices
摘要 A bipolar device hardened against single event upset includes a voltage source, a substrate, and a surface contact. The substrate includes a first collector region, a first base region and a first emitter region. The first collector region has a first collector voltage and a first voltage threshold. The first voltage threshold is the voltage at which a bipolar device connected to the first collector or first emitter becomes upset. When the first collector voltage drops below the first voltage threshold, the attached bipolar device becomes upset. The first base region is adjacent to the first collector region and the first emitter region is adjacent to the first base region. The surface contact is disposed on the substrate and is coupled to a voltage bias generated by the voltage source. The voltage bias is greater then the first voltage threshold so that the first collector voltage is prevented from dropping below the first voltage threshold due to energetic particle induced charge.
申请公布号 US6583493(B1) 申请公布日期 2003.06.24
申请号 US20000488193 申请日期 2000.01.20
申请人 THE BOEING COMPANY 发明人 SHOGA MUNIR
分类号 H01L29/732;(IPC1-7):H01L31/11 主分类号 H01L29/732
代理机构 代理人
主权项
地址