发明名称 |
Semiconductor integrated circuit device with information storage capacitor having ruthenium dioxide lower electrode and crystallized TA2O5 capacitor insulator |
摘要 |
A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate 1 and an information storage capacitor C that is connected in series to said memory cell selecting MISFET Qs, and that have a lower electrode 54, a capacitor insulator 58 and an upper electrode 59, wherein the lower electrode 54 is made of a conductive material containing ruthenium dioxide (RuO2) as principle ingredient and the capacitor insulator 58 is made of crystalline tantalum pentoxide. Thus, the capacitance required for the memory cells of a 256 Mbits DRAM or those of a DRAM of a later generation can be secured.
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申请公布号 |
US6583463(B1) |
申请公布日期 |
2003.06.24 |
申请号 |
US19980172196 |
申请日期 |
1998.10.14 |
申请人 |
HITACHI, LTD. |
发明人 |
NAKANISHI NARUHIKO;KOBAYASHI NOBUYOSHI;OHJI YUZURU;IIJIMA SINPEI;SUGAWARA YASUHIRO;KANAI MISUZU |
分类号 |
H01L27/108;H01L21/02;H01L21/314;H01L21/316;H01L21/8242;H01L27/10;H01L29/76;H01L29/94;H01L31/119;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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