发明名称 ANTI-FUSE CIRCUIT AND METHOD OF OPERATION
摘要 An anti-fuse useful in implementing redundancy in a memory utilizes a normal transistor characteristic that is generally considered undesirable in order to provide two easily detected states. The un-programmed state, which is the high impedance state, is achieved simply with a normal transistor in its nonconductive state. The programmed state, which is the low impedance state, is achieved by forcing a normal transistor to conduct current through its gate. This causes the gate dielectric to become permanently conductive. This programmed transistor then is conductive between its source and drain that is easily differentiated from the transistor that is held in its non-conductive state. The result is a fuse technology using an anti-fuse that provides for easily distinguishable programmed and un-programmed states achieved by electrical programming rather than by laser programming.
申请公布号 US2003112055(A1) 申请公布日期 2003.06.19
申请号 US20010017429 申请日期 2001.12.14
申请人 REBER DOUGLAS M.;CROWN STEPHEN R. 发明人 REBER DOUGLAS M.;CROWN STEPHEN R.
分类号 G11C17/18;H01L23/525;(IPC1-7):H01H37/76 主分类号 G11C17/18
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