发明名称 |
Production of semiconductor wafers made from silicon comprises sawing a single crystal made from silicon into silicon wafers, forming a mechanical cut on both sides of the wafers, polishing using polishing plates, and surface polishing |
摘要 |
Production of semiconductor silicon wafers made comprises: sawing a silicon single crystal into wafers using a wire cutter; forming a mechanical cut on both sides of the wafers to a depth of at least 20 microns ; simultaneously polishing the front and rear sides of the wafers between polishing plates with introduction of polishing agent containing abrasive material or colloids; and surface polishing at least the front side of wafers. Preferred Features: The polishing plates have a polishing cloth with a Shore A hardness of 40-60 and a smooth polyurethane surface having a pore diameter of 50-500 microns without a macroscopic texture. An Independent claim is also included for a semiconductor wafer produced by the above process.
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申请公布号 |
DE10217374(A1) |
申请公布日期 |
2003.06.18 |
申请号 |
DE2002117374 |
申请日期 |
2002.04.18 |
申请人 |
WACKER SILTRONIC AG |
发明人 |
MEIER, KLAUS PETER;BUSCHHARDT, THOMAS;HENNHOEFER, HEINRICH;WENSKI, GUIDO;LICHTENEGGER, BRUNO |
分类号 |
B24B37/04;B24B37/08;H01L21/306;(IPC1-7):H01L21/302;B24B27/04 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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