发明名称 |
THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR FABRICATING THE SAME AND LIQUID CRYSTAL DISPLAY |
摘要 |
PURPOSE: A thin film transistor substrate, a method for fabricating the substrate and a liquid crystal display are provided to increase sustain capacitance without decreasing aperture rate to improve response speed of the liquid crystal display. CONSTITUTION: A gate line(22), a gate electrode(26) and a sustain capacitor line(28) are formed on an insulating substrate. A gate insulating layer covers the gate line, gate electrode and sustain capacitor line. A semiconductor pattern(42) is formed on the gate insulating layer. A data line(62), source and drain electrodes(65,66) are formed on the gate insulating layer, and a sustain capacitor conductive pattern(68) forming the first sustain capacitance is superposed on a part of the sustain capacitor line. A passivation layer covers the data line, source and drain electrodes, sustain capacitor conductive pattern and semiconductor pattern. The first and second contact holes(72,78) are formed in the passivation layer to expose the drain electrode and sustain capacitor conductive pattern. A pixel electrode(82) is formed on the passivation layer and connected to the drain electrode and sustain capacitor conductive pattern through the first and second contact holes and forms the second sustain capacitance together with a part of the sustain capacitor line. |
申请公布号 |
KR20030047365(A) |
申请公布日期 |
2003.06.18 |
申请号 |
KR20010077838 |
申请日期 |
2001.12.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHANG, HAK SEON;KIM, NAM HEUNG;LEE, CHANG HUN |
分类号 |
G02F1/1343;(IPC1-7):G02F1/134 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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