| 摘要 |
PROBLEM TO BE SOLVED: To provide an optimum method when treating an object to be treated such as a semiconductor wafer by super-critical carbon dioxide. SOLUTION: In the high-pressure treatment method, an unnecessary material on an object to be treated is removed by bringing the object to be treated into contact with super-critical carbon dioxide and chemical liquid in a high- pressure treatment chamber, a process for removing the unnecessary material on the object to be treated for treatment and first and second rinse processes are conducted by nearly the same pressure while the super-critical carbon dioxide is allowed to circulate continuously. COPYRIGHT: (C)2003,JPO |
