| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which peeling of an electrode or contact resistance increase is suppressed and deterioration of a device element is hard to occur, and to provide a method of manufacturing the same. SOLUTION: A mask layer 15 is formed on a part of a SiC substrate 11, and N, as an impurity, is implanted. By setting the thickness of the mask layer 15 thinner than the implanted depth of the impurity, a high dose region 12 is formed in a region, not covered by the mask, of the upper part of the SiC substrate 11, while low-dose regions 13 are formed in regions, covered by the mask, of the upper part of the SiC substrate 11. After the impurity is activated by heat treatment, and after an upper part of the high-dose region 12 and of the low-dose regions 13 are removed, an ohmic electrode 14 that contacts the high-dose region 12 and the low-dose regions 13 and that is made of Ni, is formed. COPYRIGHT: (C)2003,JPO
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