| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning method and a cleaning apparatus of a semiconductor substrate that can satisfactorily carry out cleaning to prevent a contact defect when a through hole is cleaned after chemical liquid treatment in the wiring process of the semiconductor substrate. SOLUTION: The discharge pressure of cleaning liquid 25 from a spray nozzle 23 is increased by establishing a booster pump P in the supply system of the cleaning liquid 25 of an existing cleaning apparatus, and a wafer 15 is cleaned by a high pressure of 2.0 to 4.0 kg/cm<SP>2</SP>. In this manner, cleaning is made by a pressure of at least 2.0 kg/cm<SP>2</SP>, thus extremely increasing cleaning force to the wafer 15. At the same time, an upper limit is set to 4.0 kg/cm<SP>2</SP>, thus increasing the cleaning force, at the same time, making larger the scattering angle of the cleaning liquid 25, allowing residue 13 adhering around the wafer 15 to be cleaned, and preventing damage to cleaning facilities despite high pressure. COPYRIGHT: (C)2003,JPO
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