METHOD FOR MANUFACTURING SILICON NITRIDE FILM, SILICON OXYNITRIDE FILM, OR SILICON OXIDE FILM BY CVD METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon nitride film, a silicon oxynitride film, or a silicon oxide film, of little hydrogen and carbon content, without generating ammonium chloride, even at a low temperature by a CVD method. SOLUTION: This manufacturing method is characterized by using at least one compound selected from the group consisting of tetrakis(hydrocarbylamino) silane indicated by the formula: Si(NHRi)4and tris(hydrocarbylamino)silane indicated in the formula: SiH(NHRi)3, (wherein each Riis a 1-4C hydrocarbon group) for a precursor of the silicon nitride film, the silicon oxynitride film, or the silicon oxide film. COPYRIGHT: (C)2003,JPO