| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which both the characteristic of bulk of a gate insulation film and the characteristic of an interface can be satisfied by a low temperature process. <P>SOLUTION: The method for manufacturing a thin film transistor comprises a step for forming a semiconductor film on a substrate (fig. 1 (b)), a step for forming a gate insulation film by depositing silicon oxide on the semiconductor film by a parallel plate plasma method using at least TEOS and oxygen as an original material (fig. 1 (f)), a step for forming a metal film accelerating decomposition of gas permeated into the gate insulation film on the gate insulation film (fig. 1 (g)), and a step for performing low temperature heat treatment of the gate insulation film (fig. 1 (g)). <P>COPYRIGHT: (C)2003,JPO</p> |
