发明名称 |
Super self -aligned heterojunction biplar transistor and its manufacturing method |
摘要 |
A super self-aligned heterojunction bipolar semiconductor device and its manufacturing method are disclosed. The present invention provides a super self-aligned heterojunction bipolar transistor that may maintain the operational stability and the uniformity of a device, facilitate the manufacturing process, and reduce manufacturing time by employing a highly concentrated thick polysilicon film; and its manufacturing method. Also, the present invention provides a super self-aligned heterojunction bipolar transistor that may reduce noise by making the base resistance reduced by a highly concentrated thick polysilicon film, and may minimize the parasitic capacitance between a collector and a base and between a base and an emitter, and the parasitic resistance of a base, so as to realize high-speed operation of a device; and its manufacturing method.
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申请公布号 |
US2003107051(A1) |
申请公布日期 |
2003.06.12 |
申请号 |
US20020294046 |
申请日期 |
2002.11.14 |
申请人 |
PARK SOO GYUN;LEE YOUNG HO;SEO KANG HOON;CHOI JIN SUNG;RHO YOUNG HWA |
发明人 |
PARK SOO GYUN;LEE YOUNG HO;SEO KANG HOON;CHOI JIN SUNG;RHO YOUNG HWA |
分类号 |
H01L21/331;H01L29/737;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;(IPC1-7):H01L31/032;H01L31/033 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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