| 摘要 |
PURPOSE: A photoresist composition, a method for forming photoresist pattern and a semiconductor device prepared by the method are provided, to improve the degradation of pattern by lowering the surface tension of photoresist itself and increasing the adhesive strength between photoresist pattern and an etched layer. CONSTITUTION: The photoresist composition comprises a base resin; a photoacid generator; an organic solvent; and 0.01-0.2 wt% of at least one salt compound selected from the group consisting of thiazolium salts, indolium salts and pyrylium salts as an additive. Preferably the base resin a chemical amplification photoresist polymer and has a repeating unit represented by the formula 2, wherein R1 is an acid-liable protecting group; R2 is a hydroxyalkyl group of C1-C10; the ratio of a : b : c : d is 0-50 : 20-50 : 1-30 : 0-45 by mol; and n is 1 or 2. |
