发明名称 FLASH MEMORY DEVICE
摘要 PURPOSE: A flash memory device is provided to improve reliability of redundancy information by reducing the area of the code address memory(CAM) sensing apparatus. CONSTITUTION: A flash memory device includes a code address memory(CAM) decoder(11) for selectively driving a plurality of CAM cell sense amplifiers(12) in response to the CAM bus line having the repair address selection signal and the repair information, one flag CAM cell sense amplifier(12) for sensing the CAM cells to store the information of the flag to identify whether the repair is implemented or not, a plurality of address CAM cell sense amplifiers(131-13n) for sensing the CAM cell to store the repair information for the address and a plurality of input and output CAM cell sense amplifiers(141-14n) for sensing the CAM cell to store the repair information for the input and output of the sector, wherein after the flag CAM cell sense amplifier(12) and the address CAM cell sense amplifiers(131-13n) are selectively driven at a level larger than a specific level and the flash memory device senses a corresponding CAM cell, the flash memory device latches the sensing result.
申请公布号 KR20030045462(A) 申请公布日期 2003.06.11
申请号 KR20010076186 申请日期 2001.12.04
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HA, IM CHEOL
分类号 G11C15/00;(IPC1-7):G11C15/00 主分类号 G11C15/00
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