METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE CONTAINING SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a MONOS semiconductor memory in which a residue or a damage does not occur in an ONO film. SOLUTION: The method for manufacturing the semiconductor memory having a MONOS structure comprises the step of preparing a semiconductor substrate, the ONO film forming step of depositing the ONO film having a first silicon oxide film, a silicon nitride film, and a second silicon oxide film on the semiconductor substrate; the step of forming a first conductive layer on the ONO film continued to the ONO film forming step; the step of forming a resist mask on the first conductive layer; the etching step of forming a groove by etching at least the first conductive layer, the second silicon oxide film, and the silicon nitride film; the step of ion implanting on the substrate of the bottom of the groove to a bit line; the step of depositing an insulating film on the substrate, and reducing the thickness of the insulating film to retain the insulating film in the groove; and the step of depositing the second conductive layer on the first conductive layer and the insulating film to a word line. COPYRIGHT: (C)2003,JPO