| 摘要 |
PROBLEM TO BE SOLVED: To easily suppress bowing without changing a gas material in an oxidation film etching using gas C<SB>4</SB>F<SB>8</SB>, CO, Ar and O<SB>2</SB>. SOLUTION: In an oxidation film etching method for forming a contact hole in the silicone oxidation film by using the etching device, gas flowing to be mixed in the etching device during the oxidation film etching contains C<SB>4</SB>F<SB>8</SB>gas, carbon monoxide CO gas, oxygen O<SB>2</SB>gas and argon Ar gas, a volume flow rate ratio of carbon monoxide CO gas is lowered by accompanying contraction of the diameter of the contact hole, and the volume flow rate ratio of argon Ar gas is increased. Thereby a rate of the maximum diameter B to an aperture diameter A of the contact hole (bowing shaped parameter B/A) is lowered and a contact inferiority ratio is improved. COPYRIGHT: (C)2003,JPO
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