| 摘要 |
<p>An exposure method and an exposure apparatus using a complementary division mask, wherein the alignment of the complementary division mask is achieved with high precision over all the regions of a semiconductor wafer. A semiconductor device made by the forgoing exposure method. A semiconductor device making method using the forgoing exposure method. In a first region of a central portion of a semiconductor wafer, the alignment of the complementary division mask is performed, based on the result of detecting the position of an alignment mark provided for each chip, by use of die-by-die alignment method, and then exposure is performed. In that second region outside the first region to which the alignment of the complementary division mask using the die-by-die alignment method cannot be applied, the coordinates of each chip in the second region are decided based on the result of detecting the positions of the alignment marks in the first process to perform the alignment of the complementary division mask by use of global alignment method, and then exposure is performed.</p> |
