发明名称 |
Method and structure for reducing leakage current in capacitors |
摘要 |
A method of forming a capacitor with reduced leakage current on a substrate in a semiconductor device is set forth. A first layer of a conductive material is formed over the substrate, and a second layer of a dielectric is formed over the first layer. The second layer is contacted with hydrogen, oxygen and nitrous oxide gases to form an oxidation layer over the second layer. A third layer of a conductive material is formed over the second layer to thereby form the capacitor. While the capacitor exhibits an improved leakage current reduction, overall capacitance is substantially unaffected, as compared to a similar capacitor having an oxidation layer built from a combination of oxygen and hydrogen gases only.
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申请公布号 |
US2003104672(A1) |
申请公布日期 |
2003.06.05 |
申请号 |
US20030340604 |
申请日期 |
2003.01.13 |
申请人 |
ZHENG LINGYI A.;PING ER-XUAN |
发明人 |
ZHENG LINGYI A.;PING ER-XUAN |
分类号 |
H01L21/02;H01L27/08;H01L27/12;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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