| 摘要 |
PURPOSE: To obtain an X-ray mask which undergoes a low film stress and is stable by a method wherein an X-ray absorber pattern which is composed of a single-crystal heavy metal is formed on an X-ray-transmitting thin film. CONSTITUTION: An X-ray-transmitting film (an SiN film) 12 is formed on one surface of a substrate 16 which is composed of a single-crystal heavy metal and both faces of which have been polished. Then, a mask support frame 14 is formed on the SiN film 12. Then, the other side of the substrate 16 is etched so as to be a thin film, and a single-crystal heavy-metal thin film 16 is formed. A silicate glass thin film 18 and a resist pattern 20 are formed on the thin film 16, an etching treatment is executed, so that a mask pattern 22 is formed. Then, the metal thin film 16 is etched down to a depth reaching the SiN film 12 via the mask pattern 22, and an X-ray absorber pattern 24 which is composed of a single-crystal heavy metal is partitioned. Thereby, an X-ray mask which undergoes a low film stress and a small dislocation is obtained easily. |
