SEMICONDUCTOR DEVICE HAVING CAPACITOR AND METAL-INTERCONNECTION IN DAMASCENE PROCESS

摘要

PURPOSE: A semiconductor device having a capacitor and a metal-interconnection in a damascene process is provided to be capable of forming a capacitor having a high dielectric constant at the same layer with a metal interconnection without additional layers for the capacitor. CONSTITUTION: An insulation layer(125) is formed at a capacitor region(A) and a metal interconnection region(B) on a substrate. A metal interconnection is formed in the insulation layer(125) of the metal interconnection region(B) by using a dual damascene process. A capacitor(172) of serpentine structure is formed in the insulation layer(125) of the capacitor region(A) at the same layer with the metal interconnection. At this time, the capacitor(172) of serpentine structure is provided with the first electrode(160), a dielectric layer(165), and the second electrode(170).