SLURRY COMPOSITION FOR POLISHING INSULATION LAYER

摘要

PURPOSE: A slurry composition for polishing an insulation layer is provided, to reduce the remaining LPD(light point defect) and the pollution of a back surface of a wafer and to improve the polishing velocity and the polishing uniformity. CONSTITUTION: The slurry composition comprises 0.1-50 wt% of a metal oxide; 0.2-2 wt% of ammonia; 0.01-2 wt% of a t-alkyl ammonium base; 0.001-1 wt% of cellulose; and 0.05-1 wt% of an amine; and the balance of deionized water. The pH of the slurry composition is 10.5-11.5. Preferably the metal oxide is silica having a primary particle size of 10-80 nm, a specific surface area of 50-200 m2/g, a secondary particle size of 100-200 nm in an aqueous dispersion and a OH concentration on the surface of silica of 0.5-4/nm2 in an aqueous dispersion. Preferably the carbon number of alkyl group of the t-alkyl ammonium base is 1-3 and the cellulose has a molecular weight of 100,000 or more.