HF CLEANING METHOD OF SILICON WAFERS

摘要

A NOVEL HF CLEANING METHOD OF SILICON WAFERS IS PROVIDED WHEREBY THE WAFERS ARE CLEANED WITH A LOWERED LEVEL OF PARTICLE CONTAMINATION ON THE SURFACE THEREOF. IN THE METHOD, AN HF BATH AND A DEIONIZED WATER BATH FOR RINSING SILICON WAFERS ARE USED IN SERIES FOR CLEANING THE WAFERS, A TAKEN-IN-OR-OUT SPEED OF EACH OF THE WAFERS IS SELECTED IN THE RANGE FROM 1 MM/SEC TO 50 MM/SEC AND A VERTICAL OSCILLATION OF THE LIQUID SURFACE EACH OF THE BOTH BATHS IS REGULATED IN THE RANGE LESS THAN 4 MM.