| 摘要 |
PROBLEM TO BE SOLVED: To make a highly reliable isolation trench having a flat surface. SOLUTION: The semiconductor device comprises an isolation region formed of a first trench made in a specified region on the surface of a semiconductor substrate and an insulation film filling the first trench and isolating the semiconductor substrate into a plurality of element regions, and an alignment mark consisting of an empty second trench exposed to the surface of the substrate wherein the surface level of the insulation film in the isolation region projects from the surface of the semiconductor substrate in the vicinity of the alignment mark. |
