发明名称 |
SEMICONDUCTOR DEVICE EQUIPPED WITH FIELD PLATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with a field plate protected against deterioration caused by an applied voltage and high in reliability. SOLUTION: This semiconductor device is equipped with a field limiting ring and a field plate in a termination region formed adjacent to an active region through which a current flows. The field plate functions as a resistor, has resistivity of 5×10<-3>Ωcm or larger, and is made of polycrystalline silicon. An insulating layer is formed between the field plate and field limiting ring to insulate them from each other. |
申请公布号 |
JP2003158258(A) |
申请公布日期 |
2003.05.30 |
申请号 |
JP20010358654 |
申请日期 |
2001.11.26 |
申请人 |
HITACHI LTD |
发明人 |
KONO YASUHIKO;MORI MUTSUHIRO |
分类号 |
H01L29/06;H01L29/739;H01L29/78;(IPC1-7):H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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