发明名称 SEMICONDUCTOR DEVICE EQUIPPED WITH FIELD PLATE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with a field plate protected against deterioration caused by an applied voltage and high in reliability. SOLUTION: This semiconductor device is equipped with a field limiting ring and a field plate in a termination region formed adjacent to an active region through which a current flows. The field plate functions as a resistor, has resistivity of 5×10<-3>Ωcm or larger, and is made of polycrystalline silicon. An insulating layer is formed between the field plate and field limiting ring to insulate them from each other.
申请公布号 JP2003158258(A) 申请公布日期 2003.05.30
申请号 JP20010358654 申请日期 2001.11.26
申请人 HITACHI LTD 发明人 KONO YASUHIKO;MORI MUTSUHIRO
分类号 H01L29/06;H01L29/739;H01L29/78;(IPC1-7):H01L29/06 主分类号 H01L29/06
代理机构 代理人
主权项
地址