发明名称 FLASH MEMORY DEVICE AND METHOD FOR ERASING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a flash memory device in which the time and power con sumption in cell erasing operation can be reduced and a method for erasing the same. SOLUTION: This device comprises a memory cell array in which many memory cells are connected between many word lines and many bit lines respectively, the many switching means connected to each bit line, and capacitors connected between the many switching means and ground.</p>
申请公布号 JP2003157684(A) 申请公布日期 2003.05.30
申请号 JP20010389281 申请日期 2001.12.21
申请人 HYNIX SEMICONDUCTOR INC 发明人 JOO SEOK JIN
分类号 G11C16/02;G11C16/06;G11C16/16;G11C16/34;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/02;H01L21/824 主分类号 G11C16/02
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