| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is surely obtained through a certain method that is different from a conventional one to realize the gradient composition of a metal silicate for improving its interface with silicon in interface characteristics and its manufacturing method. SOLUTION: A semiconductor device is equipped with a silicon-containing semiconductor layer (10); an insulating layer (20) which is formed thereon and contains silicon (Si), oxygen (O), nitrogen (N), and metal element, and a conductive layer (30) formed thereon. The insulating layer (20) has a distribution of metal concentration in which metal concentration becomes lower at points closer to the semiconductor layer and higher at points closer to the conductive layer and a distribution of nitrogen concentration in which nitrogen concentration becomes higher at points closer to the semiconductor layer and lower at points closer to the conductive layer.
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