Production of a semiconductor element comprises forming a light doped amorphous silicon layer on a substrate, thermally treating the silicon layer to form a polysilicon layer, forming a conducting layer, and implanting impurity ions

摘要

Production of a semiconductor element comprises forming a light doped amorphous silicon layer on a substrate; thermally treating the silicon layer to form a polysilicon layer; forming a conducting layer on the polysilicon layer; and implanting impurity ions of first conductivity in the polysilicon layer to form a first conducting region and implanting impurity ions of second conductivity in the polysilicon layer to form a second conducting region. Preferred Features: The impurity ions of first conductivity are arsenic ions and phosphorus ions. The doped silicon layer is produced by lightly doping with impurity ions of first conductivity having a first concentration. The conducting regions are made from tungsten silicide, titanium silicide, molybdenum silicide, tantalum silicide or cobalt silicide.