METHOD FOR FABRICATING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a contact hole of a semiconductor device is provided to easily control the line width of a conductive pattern like a gate pattern by eliminating the need to use a capping layer composed of a silicon nitride layer in an uppermost conductive pattern, and to decrease contact resistance by reducing damage to a substrate and generation of polymer in a contact hole formation process having a high etch selectivity between a spacer and an interlayer dielectric. CONSTITUTION: A conductive pattern is formed on a substrate(10). A spacer(17) is formed on the sidewall of the conductive pattern. An interlayer dielectric(21) having etch selectivity regarding the spacer is formed on the substrate having the spacer. An assistant layer having etch selectivity regarding the interlayer dielectric is formed on the dielectric layer. An assistant layer pattern(123) includes a region in which a contact is to be formed through a patterning process, having the first window including an interface that coincides with one end of the contact formation region. A photoresist pattern includes the contact formation region on the first window, having the second window including an interface that coincides with the other end of the contact formation region such that the other end is opposite to the one end. The interlayer dielectric is etched to form a contact hole exposing the substrate by using the photoresist pattern and the assistant layer pattern as an etch mask.