发明名称 Method of forming a capacitor
摘要 A method of forming a capacitor. The method includes forming an opening in a substrate, forming an adhesion layer in the opening, and forming a conductive layer in the opening on the adhesion layer. The adhesion layer has a first surface in contact with the substrate, and the conductor has a thickness of less than six hundred angstroms. The method further includes annealing the adhesion layer and the conductor, exposing the first surface of the adhesion layer, forming a dielectric layer on the conductor, and forming a second conductor on the dielectric layer.
申请公布号 US6569689(B2) 申请公布日期 2003.05.27
申请号 US20020157376 申请日期 2002.05.29
申请人 发明人
分类号 H01L21/02;(IPC1-7):H01L21/00 主分类号 H01L21/02
代理机构 代理人
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