| 摘要 |
A self-aligned split-gate flash memory cell and its contactless NOR-type memory array are disclosed by the present invention, which comprise a shallow-trench-isolation structure having an integrated floating-gate structure and the embedded double-sides erase cathodes; a self-aligned split-gate flash memory cell having a steep or one-side tapered floating-gate structure; a bit line integrated with planarized common-drain conductive islands; and a common-source conductive bus line. Therefore, the present invention offers a smaller cell area, a higher coupling ratio through an integrated floating-gate structure, a higher erasing speed through the embedded double-sides erase cathodes, higher contact integrity for shallow junction through a common-drain conductive island, and lower bus-line resistance and capacitance through a common-source conductive bus line.
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