| 摘要 |
PURPOSE:To provide a composite structure of Pb ferroelectric material and Si base, which has an excellent characteristic that suppresses Si diffusion. CONSTITUTION:A composite structure of a ferroelectric thin film and a base is formed by placing the ferroelectric thin film which contains lead on the base formed of a board or thin film which contains silicon. Between the ferroelectric thin film (for example, PbTiO3 ferroelectric film) 3 and the base (for example, Si board) 1, a ferroelectric thin film 2 formed of a lead titanate layer which does not have the stoichiometric composition and lacks in lead [for example PbTiOx+2 (x<1)] or an oxide layer which has zircon as the major element (for example, ZrO2) is sandwiched. |
