| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device wherein aluminum is stacked without closing an aperture of a small-sized contact whole when aluminum is stacked on a contact hole formed on an oxide film on a substrate, and a superior aluminum electrode can be formed. SOLUTION: A pattern is formed on an oxide film 2 stacked on a semiconductor substrate 1 by using a resist 6, and etching is performed as far as halfway to the oxide film 2 by isotropic dry etching. Etching is performed further until reaching a semiconductor substrate 1 by anisotropic etching, and a contact hole 3 is formed. Aluminum 7 is stacked in order on the contact hole 3, an aluminum electrode 4 is formed, and an overcoat film 5 is formed further on the aluminum electrode 4.
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