SEMICONDUCTOR DOPING METHOD PREVENTING REMAINING IMAGE REJECT OF PHOTORESIST AND LCD FABRICATING METHOD BY USING THE SAME

摘要

PURPOSE: A semiconductor doping method for preventing the remaining image reject of a photoresist and a method for fabricating a liquid crystal display device by the method are provided to prevent the deformation of a photoresist by impurities as the cross linking of the photoresist increases, thereby preventing the remaining images caused by the incomplete etching of the photoresist. CONSTITUTION: A semiconductor doping method for preventing the remaining image reject of a photoresist includes the steps of providing semiconductor layers(204a-204c) formed with an insulating layer on a top surface, blocking partial areas of the semiconductor layers by patterning a photoresist after doping the photoresist on the insulating film, carrying out first and second hard baking of the photoresist(220) in sequence, doping impurities while blocking the partial areas of the semiconductor layers with the photoresist, and removing the photoresist.