发明名称 |
DISPOSITIF MAGNETIQUE A JONCTION TUNNEL MAGNETIQUE, MEMOIRE ET PROCEDES D'ECRITURE ET DE LECTURE UTILISANT CE DISPOSITIF |
摘要 |
The invention concerns a magnetic device with magnetic tunnel junction, memory array and read/write methods using same. Said device (8) comprises a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b). The temperature blocking the storage layer magnetization is lower than that of the reference layer. The device also comprises means (22, 24) for heating the storage layer beyond the temperature blocking its magnetization and means (26) for applying thereto a magnetic field (34) orienting its magnetization relative to that of the reference layer without modifying the orientation of the latter. |
申请公布号 |
FR2832542(A1) |
申请公布日期 |
2003.05.23 |
申请号 |
FR20010014840 |
申请日期 |
2001.11.16 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
DIENY BERNARD;REDON OLIVIER |
分类号 |
H01F10/16;G11C11/15;H01F10/30;H01F10/32;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;H01L43/10 |
主分类号 |
H01F10/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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