| 摘要 |
PURPOSE: To prepare a mask where dimension errors due to a plurality of causes including backscattering, a Coulomb effect, and a dimension error caused by processes are corrected, to obtain an accurate exposure pattern, and to greatly reduce a data processing time required for correction by an area density map. CONSTITUTION: An exposure pattern is divided into partitioned regions where each influence range of backscattering, a Coulomb effect, and a dimension error caused by processes is considered, a pattern area share (pattern area density) in the partitioned regions is conserved, and exposure is made by a pattern where the amount of pattern deformation is obtained as the function of each pattern area density. |
