发明名称 |
Illumination system particularly for microlithography |
摘要 |
A projection exposure apparatus for microlithography using a wavelength<=193 nm, includes (A) a primary light source, (B) an illumination system having (1) an image plane, (2) a plurality of raster elements for receiving light from the primary light source, and (3) a field mirror for receiving the light from the plurality of raster elements and for forming an arc-shaped field having a plurality of field points in the image plane, and (C) a projection objective. The illumination system has a principle ray associated with each of the plurality of field points thus defining a plurality of principle rays. The plurality of principle rays run divergently into the projection objective.
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申请公布号 |
US2003095622(A1) |
申请公布日期 |
2003.05.22 |
申请号 |
US20020201652 |
申请日期 |
2002.07.22 |
申请人 |
CARL ZEISS SEMICONDUCTOR MANUFACTURING TECHNOLOGIES AG |
发明人 |
SCHULTZ JORG;WANGLER JOHANNES;SCHUSTER KARL-HEIN;DINGER UDO;SINGER WOLFGANG;ANTONI MARTIN;MANN HANS-JUERGEN;ULRICH WILHELM |
分类号 |
G02B17/06;G03F7/20;G21K1/06;G21K5/00;G21K5/04;(IPC1-7):G21K5/00 |
主分类号 |
G02B17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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