Non-volatile memory device with burst mode reading and corresponding reading method

摘要

The invention relates to a read control circuit portion (1) and an attendant reading method for an electronic memory device (2) integrated in a semiconductor and including a non-volatile memory matrix (4) with associated row and column decoders (5,6) connected to respective outputs of an address counter (7), an ATD circuit (12) for detecting an input transaction as the memory device is being accessed, and read amplifiers (8) and attendant registers (10) for transferring the data read from the memory (2) to the output. The control circuit portion (1) comprises a detection circuit block (15) which is input a clock signal (CK) and a logic signal (BAN) to enable reading in the burst mode, and a burst read mode control logic (3) connected downstream of the circuit block (15). The method of this invention comprises accessing the memory matrix in a random read mode; detecting a request for access in the burst read mode; and executing the parallel reading of a plurality of memory words during a single period of time clocked by a clock signal (CK). <IMAGE>