STEPPED UPPER ELECTRODE FOR PLASMA PROCESSING UNIFORMITY
摘要
<p>A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.</p>
申请公布号
WO0231859(A9)
申请公布日期
2003.05.22
申请号
WO2001US42611
申请日期
2001.10.10
申请人
LAM RESEARCH CORPORATION;DHINDSA, RAJINDER;SRINIVASAN, MUKUND;EPPLER, AARON;LENZ, ERIC
发明人
DHINDSA, RAJINDER;SRINIVASAN, MUKUND;EPPLER, AARON;LENZ, ERIC