Optical semiconductor device, method for manufacturing the same

摘要

An optical semiconductor device is constituted from a group III-V compound semiconductor of which a crystal is grown by a selective metal-organic vapor phase epitaxy. At least two kinds of the group V elements are included and the compound semiconductor is formed under a group V element supplying condition different from that of a non-selective metal-organic vapor phase epitaxy so that the compound semiconductor includes the desired proportions of the group V elements.