| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device wherein, in an upper layer wiring film extending from a lower layer wiring film formation region to the outside of the lower layer wiring film formation region, the upper layer wiring film and a lower layer wiring film can be formed without coming into contact with each other. SOLUTION: An upper layer wiring film 28 is arranged to extend from a cell plate 11a formation region to the outside of the cell plate 11a formation region on a cell plate 11a and not electrically conducted to the cell plate 11a. The upper layer wiring film comprises a lower interlayer dielectric 20 formed to cover the cell plate 11a, a first wiring film 21 on the lower interlayer dielectric 20, a second wiring film 22, and a third wiring film 27 embedded in first and second contact holes 24, 25 extending through the upper interlayer dielectric 23 onto the first and second wiring films 21, 22, and formed to connect the first and second wiring films 21, 22. |
