| 摘要 |
In a semiconductor laser, non-disordered quantum well active region function s as a lasing region. Surrounding the non-disordered quantum well active region is a disordered quantum well active region which prevents diffusion of injected carriers fro m the non- disordered quantum well active region or provides a lateral heterobarrier. T he disordered quantum well active region is formed by rapid thermal annealing in which defects from one or two InP defect layers diffuse into the parts of the quantum well active region to be disordered.
|
