发明名称 POROUS SILICEOUS FILM HAVING LOW PERMITTIVITY, SEMICONDUCTOR DEVICES AND COATING COMPOSITION
摘要 There is provided a porous silica coating, suitable for an interlayer dielectric, which stably exhibits an extremely low specific dielectric constant and which also has resistance to various chemicals and a mechanical strength allowing the coating to withstand the latest highly integrating process including a CMP process. The porous coating of the present invention is obtained by baking a coating of a composition comprising a polyalkylsilazane and a polyacrylic or polymethacrylic ester, and is characterized by having a specific dielectric constant of less than 2.5.
申请公布号 KR20030038720(A) 申请公布日期 2003.05.16
申请号 KR20037002963 申请日期 2003.02.27
申请人 发明人
分类号 C08L33/06;H01L21/316;C08L83/16;C09D1/00;C09D133/06;C09D183/16;H01L21/768 主分类号 C08L33/06
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