发明名称 ELECTROLYTIC COPPER PLATING METHOD
摘要 PURPOSE: An electrolytic copper plating method is provided, which causes no deterioration in the appearance of plating, and is suitable for the formation of filled via holes. CONSTITUTION: The electrolytic copper plating method comprises the steps of contacting a substrate to be plated with an electrolytic copper plating solution containing a transition metal oxide, and applying sufficient current density to the plating solution so that a copper layer is deposited on the substrate, wherein the electrolytic copper plating solution further contains copper sulfate, wherein the electrolytic copper plating method further comprises the step of irradiating ultraviolet rays or visible rays onto the electrolytic copper plating solution, wherein the electrolytic copper plating solution further contains brightening agent having X-S-Y structure (wherein, X and Y are an atom respectively independently selected from the group consisting of a hydrogen atom, a carbon atom, a sulfur atom, a nitrogen atom and an oxygen atom; and X and Y can be made the same only in the case they are a carbon atom), wherein the substrate is a printed circuit board or wafer, and wherein the substrate has one or more of through-holes or via holes.
申请公布号 KR20030038475(A) 申请公布日期 2003.05.16
申请号 KR20020068625 申请日期 2002.11.07
申请人 SHIPLEY COMPANY, L.L.C 发明人 TSUCHIDA HIDEKI;KUSAKA MASARU;HAYASHI SHINJIRO;TSUKAGOSHI SATORU
分类号 C25D3/38;C25D7/12;H01L21/288;H01L21/768;H05K3/42;(IPC1-7):C25D3/38 主分类号 C25D3/38
代理机构 代理人
主权项
地址