| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an integrated circuit equipped with a shallow junction. SOLUTION: A diffusion preventing film pattern 12 is formed on a semiconductor substrate 10, an SOG film doped with impurities is formed on the semiconductor substrate 10, and impurity ions are additionally implanted into the SOG film by a plasma ion implantation method to increase the SOG film in impurity concentration. Then, the impurities are diffused into the semiconductor substrate by rapid heat treatment by a solid-state diffusion method for the formation of a shallow junction. In this case, impurity concentration is precisely controlled by a plasma ion implantation method, but impurity ions are not implanted directly into the semiconductor substrate, so that the crystalline structure of the substrate is not damaged. Furthermore, if this method is applied after a gate electrode is formed, an LDD region and a source/drain extended region are formed in a self-aligned manner.
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