METHOD AND APPARATUS FOR BOOSTING BITLINES FOR LOW VCC READ

摘要

A memory device is disclosed having a memory cell (202) in electrical communication with a node (A), and operative to indicate a binary value associated with data stored in the memory cell (202) during a read operation when a first voltage is applied to the memory cell (202). The memory device includes a voltage booster (220) connected between the node and a supply voltage which provides a boosted voltage to the node during the read operation, wherein the boosted voltage is greater than the supply voltage. A method (300) is also disclosed for reading data stored in a memory cell (202), comprising applying (306) a boosted voltage to a node (A) in electrical communication with the memory cell (202), wherein the boosted voltage is greater that a supply voltage, and sensing (310) a current associated with the memory cell (202) in order to indicate a binary value associated with data stored in the memory cell (202) during a read operation.