Production of electrical contact region in micro-electronic semiconductor used in integrated circuit comprises producing trench in substrate, forming insulating layer partially covering trench wall and filling trench with conductive filler

摘要

Production of electrical contact region in micro-electronic semiconductor structure comprises: producing trench in substrate; forming insulating layer partially covering the trench wall and filling the trench with electrically conductive filler; removing the first filler from the trench up to a required depth a; removing the insulating layer up to a depth b; and forming electrical contact region. Production of an electrical contact region in a micro-electronic semiconductor structure comprises: producing a trench (4) in a substrate (1); forming an insulating layer (9) partially covering the trench wall and filling the trench with an electrically conducting filler (10); removing the first filler from the trench up to a required depth a; removing the insulating layer up to a depth b which is deeper than depth a; and forming an electrical contact region (13, 14) on the edge regions of the trench, in which the insulating layer is removed, in the region between the depth b up to the maximum to a processed upper edge of the filling of the trench. Preferred Features: The processed upper edge of the filling of the trench is produced through the surface of the first filler. An intermediate layer having a thickness d is deposited on the horizontal surface of the first filler through which the processed upper edge of the filling of the trench is produced.